Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
2.7
22
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 2.7A
(Note 2)
0.95
1.6
V
t rr
Reverse Recovery Time
V GS = 0 V, I F = 10 A, dI F /dt = 100 A/μs
140
ns
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
P D ( t ) =
T J ? T A
R θ J A ( t )
=
T J ? T A
R θ J C + R θ CA ( t )
= I 2 D ( t ) × R DS ( ON )
T J
Typical R θ JA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42 o C/W when mounted on a 1 in 2 pad of 2oz copper.
b. 95 o C/W when mounted on a 0.066 in 2 pad of 2oz copper.
c. 110 o C/W when mounted on a 0.0123 in 2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT014 Rev. C1
相关PDF资料
NDT2955 MOSFET P-CH 60V 2.5A SOT-223-4
NDT3055L MOSFET N-CH 60V 4A SOT-223-4
NDT3055 MOSFET N-CH 60V 4A SOT-223-4
NDT451AN_J23Z MOSFET N-CH 30V 7.2A SOT-223
NDT452AP MOSFET P-CH 30V 5A SOT-223-4
NDT454P MOSFET P-CH 30V 5.9A SOT-223
NDT456P MOSFET P-CH 30V 7.5A SOT-223-4
NE34018-EVGA19 EVAL BOARD NE34018 1.9GHZ
相关代理商/技术参数
NDT014(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
NDT014L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT014L 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDT014L_SB9D008 制造商:Fairchild Semiconductor Corporation 功能描述:N channel MOSFET
NDT01N60 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 8.5
NDT01N60T1G 制造商:ON Semiconductor 功能描述:NFET SOT223 600V 0.4A 65M - Tape and Reel 制造商:ON Semiconductor 功能描述:NFET SOT223 600V 0.4A 65M - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / NFET SOT223 600V 0.4A 65M
NDT-03B 制造商:Star Micronics 功能描述:SPEAKER, 15MMX15MM, 8 OHM, 500mW, Transducer Function:Speaker, Power Rating RMS:
NDT-03C 制造商:Star Micronics 功能描述:LOUDSPEAKER SMD 10CM 90DB 制造商:Star Micronics 功能描述:LOUDSPEAKER, SMD, 10CM, 90DB 制造商:Star Micronics 功能描述:LOUDSPEAKER, SMD, 10CM, 90DB, Transducer Function:Speaker, Power Rating RMS:0.5W